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Towards the ultimate goal of AlN-based HEMTs grown on silicon substrates

Abstract : Using NH3-MBE, AlN-based HEMTs on silicon are demonstrated for the first time. Ultra-thin heterostructures typically consist of 200 nm-thick AlN buffer, followed by 20 nm-thick strained GaN channel, 3-10 nm-thick AlN barrier. 2DEG densities (Ns) are measured as a function of AlN barrier thicknesses. Value as high as 2.7x10 13 cm-2 is measured before passivation. Ns increases improving the material quality and using SiN passivation. In-situ SiN passivation using NH3-MBE is presented for the first time. State-of-the-art mobility values above 600 cm²/Vs are measured and recent improvements are ongoing to lower the sheet resistance as required for high-frequency applications.
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Submitted on : Saturday, July 24, 2021 - 8:06:40 PM
Last modification on : Wednesday, October 27, 2021 - 7:50:17 AM


  • HAL Id : hal-03298872, version 1


Stephanie Rennesson, Fabrice Semond, Maud Nemoz, Jean Massies, Sebastien Chenot, et al.. Towards the ultimate goal of AlN-based HEMTs grown on silicon substrates. Compound Semiconductor Week 2017, May 2017, Berlin, Germany. ⟨hal-03298872⟩



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