[Invited] GaN integration on silicon for high power devices

F Medjdoub (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 WIND - IEMN - WIde baNd gap materials and Devices - IEMN

GaN integration on silicon for high power devices GaN-based switches will offer greater efficiency, power handling, and compactness as compared to the well-established, widely available silicon MOSFET power devices-all factors that are critical to meeting the needs of today's systems. In this frame, GaN high electron mobility transistors (HEMTs) grown on silicon substrate offer the potential to revolutionize power electronics by enabling important energy savings and new flexibility for advanced power circuits. These types of emerging transistors with superior performance have been largely demonstrated and are being widely commercialized by numbers of industrials. However, the vertical breakdown voltage of GaN-on-silicon heterostructures is currently limited to slightly above 1000 V, preventing to benefit from this technology for higher voltage applications. This talk will discuss some potential solutions for next generation lateral GaN-on-Silicon power devices targeting 1200 V and above, which would pave the way to much lower onresistance than other existing technologies operating above 1 kV.

Domaines: Sciences de l'ingénieur [physics]

F Medjdoub. [Invited] GaN integration on silicon for high power devices. European Materials Research Society (E-MRS) Fall 2019, Sep 2019, Warsaw, Poland. ⟨hal-03287384⟩