InAlN/GaN MOSHEMT with thermally grown oxide

F Medjdoub (1) , J.-F Carlin (2) , M Alomari (1) , M Gonschorek (2) , E Feltin (2) , M A Py (2) , Christophe Gaquière (3) , N Grandjean (2) , E Kohn (1)

1 UUlm - University of Ulm
2 EPFL - Ecole Polytechnique Fédérale de Lausanne
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Domaines: Sciences de l'ingénieur [physics]

F Medjdoub, J.-F Carlin, M Alomari, M Gonschorek, E Feltin, et al.. InAlN/GaN MOSHEMT with thermally grown oxide. Device Research Conference, Jun 2008, Santa barbara, United States. ⟨hal-03281290⟩