Electrothermal modeling of GaN power transistor for high frequency power converter design

Loris Pace (1) , Florian Chevalier (1) , Arnaud Videt (1) , N. Defrance (2, 3) , Nadir Idir (1) , Jean-Claude de Jaeger (2, 3)

1 L2EP - Laboratoire d’Électrotechnique et d’Électronique de Puissance - ULR 2697
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 PUISSANCE - IEMN - Puissance - IEMN

This work proposes the electrothermal modeling of a packaged GaN power transistor in order to evaluate by simulation its performances in a 200 W - 1 MHz DC/DC converter. The complete electrical modeling of the high frequency converter using EM-circuit co-simulations is presented. After validation of the GaN transistor switchings waveforms and estimation of power losses, the operating temperature of the device is simulated and experimentally validated.

Mots clés: Gallium Nitride; High frequency power converter; High power density systems; Modelling; Radio frequency

Domaines: Sciences de l'ingénieur [physics]

Loris Pace, Florian Chevalier, Arnaud Videt, N. Defrance, Nadir Idir, et al.. Electrothermal modeling of GaN power transistor for high frequency power converter design. 22nd European Conference on Power Electronics and Applications (EPE ECCE Europe), Sep 2020, Lyon, France. pp.1-10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215782⟩. ⟨hal-03276912⟩