Sub-THz and THz SiGe HBT Electrical Compact Modeling

Bishwadeep Saha (1, 2) , Sebastien Fregonese (2) , Anjan Chakravorty (1) , Soumya Ranjan Panda (1, 2) , Thomas Zimmer (2)

1 IIT Madras - Indian Institute of Technology Madras
2 IMS - Laboratoire de l'intégration, du matériau au système

From the perspectives of characterized data, calibrated TCAD simulations and compact modeling, we present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55-nm BiCMOS process technology from STMicroelectronics. The TCAD simulation platform is appropriately calibrated with the measurements in order to aid the extraction of a few selected high-frequency (HF) parameters of the state-of-the-art compact model HICUM, which are otherwise difficult to extract from traditionally prepared test-structures. Physics-based strategies of extracting the HF parameters are elaborately presented followed by a sensitivity study to see the effects of the variations of HF parameters on certain frequency-dependent characteristics until 500 GHz. Finally, the deployed HICUM model is evaluated against the measured s-parameters of the investigated SiGe HBT until 500 GHz.

Mots clés: NQS effects; transients; compact model; TCAD; HICUM

Domaines: Micro et nanotechnologies/Microélectronique

Bishwadeep Saha, Sebastien Fregonese, Anjan Chakravorty, Soumya Ranjan Panda, Thomas Zimmer. Sub-THz and THz SiGe HBT Electrical Compact Modeling. Electronics, 2021, 10 (12), pp.1397. ⟨10.3390/electronics10121397⟩. ⟨hal-03273304⟩