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Interfacial Dzyaloshinskii-Moriya Interaction, Perpendicular Magnetic Anisotropy and damping in CoFeB/oxide-based systems

Abstract : Perpendicular magnetic anisotropy (PMA), spin pumping induced damping and interfacial Dzyaloshinskii-Moriya interaction (iDMI), which are spin-orbit coupling-related phenomena of utmost importance for applications, were experimentally investigated in as grown and 225°C annealed CoFeB/PtOx, CoFeB/TaOx and Ta/CoFeB/TaOx systems by means of vibrating sample magnetometry, microstrip ferromagnetic resonance and Brillouin light scattering techniques. By varying Co8Fe72B20 (CoFeB) thickness in the range 0.8-10 nm, the effect of Ta buffer layer on anisotropy and damping was first studied, where a large surface magnetic anisotropy (Ks=2.1±0.16 erg/cm2) was measured in the unbuffered CoFeB/TaOx(0.8nm) system most likely due to their higher roughness induced by the substrate. Ks degrades significantly for CoFeB film thickness below 2 nm where spontaneous perpendicular magnetization was found to be impossible without Ta buffer layer. PMA, iDMI and damping of as-deposited and 225°C annealed CoFeB(1.5 nm)/PtOx systems were measured as a function of PtOx thickness in the range 0.7-1.6 nm. Their strong dependence versus the PtOx thickness was attributed to the decrease of the magnetic dead layer as PtOx thickness increases. Linear dependence of damping versus PMA constant was obtained confirming their relation with the spin orbit coupling. Moreover, annealing increases PMA and the effective mixing conductance probably due to the enhancement of the CoFeB crystal structure and interfaces.
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Submitted on : Wednesday, June 23, 2021 - 3:57:42 PM
Last modification on : Friday, April 1, 2022 - 3:46:49 AM
Long-term archiving on: : Friday, September 24, 2021 - 6:51:27 PM

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I. Benguettat-El Mokhtari, y. Roussigne, S. M Cherif, S. Auffret, C. Baraduc, et al.. Interfacial Dzyaloshinskii-Moriya Interaction, Perpendicular Magnetic Anisotropy and damping in CoFeB/oxide-based systems. IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, In press, pp.1-1. ⟨10.1109/TMAG.2021.3088995⟩. ⟨hal-03268994⟩

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