Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO 2 nanoparticles

Ruiling Gong (1) , Edy Azrak (2) , Celia Castro (2) , Sébastien Duguay (2) , Philippe Pareige (2) , Pere Roca I Cabarrocas (3) , Wanghua Chen (1)

1 NBU - Ningbo University
2 GPM - Groupe de physique des matériaux
3 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]

Domaines: Matériaux; Micro et nanotechnologies/Microélectronique

Ruiling Gong, Edy Azrak, Celia Castro, Sébastien Duguay, Philippe Pareige, et al.. Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO 2 nanoparticles. Nanotechnology, 2021, 32 (34), pp.345602. ⟨10.1088/1361-6528/abfc72⟩. ⟨hal-03249563⟩