Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

P. Dumas (1) , P.-L. Julliard (1) , J. Borrel (1) , Sébastien Duguay (2) , F. Hilario (1) , F. Deprat (1) , V. Lu (3) , W. Zhao (3) , W Zou (3) , E. Arevalo (3) , Didier Blavette (2)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 GPM - Groupe de physique des matériaux
3 Applied Materials Gloucester

Domaines: Matériaux; Micro et nanotechnologies/Microélectronique

P. Dumas, P.-L. Julliard, J. Borrel, Sébastien Duguay, F. Hilario, et al.. Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling. Journal of Applied Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩. ⟨hal-03249547⟩