Millimeter-wave six-port IQ demodulator in 65 nm SOI CMOS technology

Kamel Haddadi (1, 2) , Christophe Loyez (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 CSAM - IEMN - Circuits Systèmes Applications des Micro-ondes - IEMN

This work describes a 65 nm SOI CMOS passive mixer architecture consisting of a n-MOS cold-FET and coplanar waveguide (CPW) transmission line matching networks for six-port IQ demodulation of millimeter-wave signals. The circuit architecture avoids the use of coupler in front of the detection circuit commonly found in six-port technology. The design and fabrication of the passive mixer are described. Demodulation results and dedicated calibration procedure at 60 GHz are experimentally verified. On this basis, A 60 GHz six-port circuit is designed and manufactured with passive mixers, 90 degrees phase-shifters, active and passive dividers to build an IQ demodulator.

Domaines: Sciences de l'ingénieur [physics]

Kamel Haddadi, Christophe Loyez. Millimeter-wave six-port IQ demodulator in 65 nm SOI CMOS technology. 30th International Instrumentation and Meausurement Technology Conference, IEEE I2MTC 2016, May 2016, Taipei, Taiwan. pp.375-379, ⟨10.1109/I2MTC.2016.7520391⟩. ⟨hal-03224659⟩