Stochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration

Silvana Guitarra (1) , Laurent Raymond (2, 3) , Lionel Trojman (4)

1 USFQ - Universidad San Francisco de Quito
2 CPT - Centre de Physique Théorique - UMR 7332
3 CPT - E6 Nanophysique
4 LISITE - Laboratoire d'Informatique, Signal et Image, Electronique et Télécommunication

A stochastic model for the resistive switching of ReRAM devices with 1T1R configuration is proposed in this work. This model states that the switching is caused by the changes that occur in the narrowest zone of the conductive filament due to the influence of the electric field. We work with a circuit representation of this zone where there are some breakers that can change their state according with a switching probability (P s) that depends on the voltage drop along the breaker and the threshold voltage. This approach gives the model the stochastic behavior and allow it to generate the variability observed in most of ReRAM devices. To includes the electrical signal of the transistor, we include a series resistance. The model has been successfully validated by comparing measured and simulated IV curves of HfO 2-based ReRAM devices of two different scales, nm 2 and µm 2. The flexibility and easy implementation of this resistive switching model makes it a powerful tool for the design and study of ReRAM memories.

Mots clés: Resistive random access memory (ReRAM); HfO2-based memory; stochastic model; 1T1R configuration; intrinsic parameters

Domaines: Electronique

Silvana Guitarra, Laurent Raymond, Lionel Trojman. Stochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration. Solid-State Electronics, 2021, 176, pp.107947. ⟨10.1016/j.sse.2020.107947⟩. ⟨hal-03218283⟩