From electrical to physical-chemical characterization of the Cu/SiO2 Hybrid-Bonding Interface – A Cu2O-Layer as a Cu Diffusion Barrier? - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Electron Device Letters Année : 2021

From electrical to physical-chemical characterization of the Cu/SiO2 Hybrid-Bonding Interface – A Cu2O-Layer as a Cu Diffusion Barrier?

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hal-03203829 , version 1 (21-04-2021)

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Stephane Moreau, Herve Manzanarez, Nicolas Bernier, Joris Jourdon, Sandrine Lhostis, et al.. From electrical to physical-chemical characterization of the Cu/SiO2 Hybrid-Bonding Interface – A Cu2O-Layer as a Cu Diffusion Barrier?. IEEE Electron Device Letters, 2021, pp.1-1. ⟨10.1109/LED.2021.3067069⟩. ⟨hal-03203829⟩
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