Low-Temperature-Grown Gallium Arsenide Photoconductors with Photoresponse Reaching 25 mA/W under 1550nm Cw Excitation

Charbel Tannoury (1) , Maximilien Billet (1) , Christophe Coinon (1, 2) , Jean-Francois Lampin (1, 3) , Emilien Peytavit (1, 3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 CMNF - IEMN - Centrale de Micro Nano Fabrication - IEMN
3 PHOTONIQUE THZ - IEMN - Photonique THz - IEMN

We show in this communication that photoconductors based on GaAs grown at low temperature can exhibit photoresponses as high as 25 mA/W under continuous-wave 1550-nm-wavelength illumination. It is achieved by using an optical Fabry-Pérot cavity in order to improve the external quantum efficiency and by decreasing the post growth annealing temperature down-to 450 °C.

Mots clés: Annealing; Photoconducting materials; Gallium arsenide; Lighting

Domaines: Sciences de l'ingénieur [physics]

Charbel Tannoury, Maximilien Billet, Christophe Coinon, Jean-Francois Lampin, Emilien Peytavit. Low-Temperature-Grown Gallium Arsenide Photoconductors with Photoresponse Reaching 25 mA/W under 1550nm Cw Excitation. 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Nov 2020, Buffalo, NY, USA, United States. pp.1-1, ⟨10.1109/IRMMW-THz46771.2020.9370757⟩. ⟨hal-03191465⟩