Effect of Temperature on Single Event Latchup Sensitivity

S. Guagliardo (1) , Frédéric Wrobel (2, 1) , Ygor Quadros de Aguiar (1) , Jean-Luc Autran (3) , P. Leroux , Frédéric Saigné (1) , Vincent Pouget (1) , Antoine Touboul (1)

1 IES - Institut d’Electronique et des Systèmes
2 RADIAC - Radiations et composants
3 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Single-Event Latchup (SEL) concerns CMOS technology as a major reliability issue and it is influenced by different parameters. In this work, the effect of the temperature variation on SELhas been investigated and its effect has been analyzed combining the variation of three parameters related to the geometry and to the design of the component: doping profile, anode to cathode spacing (A-C spacing) and substrate and well taps placement. 2D TCAD simulations have been performed, using an NPNP structure based on 65nm CMOS inverter. From these simulations, we have analyzed threshold LET and SEL rate. Results show that temperature impact is stronger when the component is less sensitive to SEL.

Mots clés: Single-Event Latchup; TCAD simulations; Cross section

Domaines: Sciences de l'ingénieur [physics]

S. Guagliardo, Frédéric Wrobel, Ygor Quadros de Aguiar, Jean-Luc Autran, P. Leroux, et al.. Effect of Temperature on Single Event Latchup Sensitivity. International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Apr 2020, Marrakech, Morocco. ⟨10.1109/dtis48698.2020.9081275⟩. ⟨hal-03187841⟩