GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates

Laura Monge-Bartolome (1, 2) , Bei Shi (3) , Billy Lai (3) , Guilhem Boissier (1, 2) , Laurent Cerutti (1, 2) , Jean-Baptiste Rodriguez (1, 2, 4) , Kei May Lau (3) , Eric Tournié (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong
4 MAT - Matériaux

We report GaSb-based laser diodes (LDs) grown on on-axis (001) Si substrates and emitting at 2.3 µm. Two series of LDs were studied and compared. For the first series, a GaAs-based buffer layer was first grown by metal organic chemical vapor deposition (MOCVD) before growing the laser heterostructure by molecular-beam epitaxy (MBE). For the second series, a MOCVD GaSb buffer layer was added between the MOCVD GaAs buffer layer and the MBE laser heterostructure. Both series of LDs exhibited threshold currents in the 50-100 mA range and several mW output power at room temperature. They demonstrated continuous wave operation (CW) up to 70°C (set-up limited) without thermal rollover. Broad area LDs exhibited record threshold-current densities in the 250-350 A.cm −2 range for the second series of LDs, in spite of cracks that appeared during device processing. These results show that the design and fabrication steps of the buffer-layer stacks are critical issues in the epitaxial integration of GaSb-based optoelectronic devices on Si substrates and offer room for much performance improvement.

Domaines: Sciences de l'ingénieur [physics]; Physique [physics]

Laura Monge-Bartolome, Bei Shi, Billy Lai, Guilhem Boissier, Laurent Cerutti, et al.. GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates. Optics Express, 2021, 29 (7), pp.11268-11276. ⟨10.1364/oe.419396⟩. ⟨hal-03184763⟩