Electrical property variability of GaN transistors in parallel and their impact on fast switching operations

Thilini Wickramasinghc (1) , Bruno Allard (1) , Rene Escofficr (2) , Marc Plissonnicr (2)

1 EE - Ampère, Département Energie Electrique
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

In this paper, the impact of paralleling nonidentical Gallium Nitride High Electron Mobility transistors (GaN HEMTs) in a high-speed switch is investigated. GaN HEMTs with a packaged p-gate and a die of MIS-gate types are being evaluated theoretically. The p-type simulation results are verified with experimental prototype of a fast switching cell.

Mots clés: GaN HEMTs; nonidentical devices; paralleling; high-speed switching; parasitics

Domaines: Energie électrique

Thilini Wickramasinghc, Bruno Allard, Rene Escofficr, Marc Plissonnicr. Electrical property variability of GaN transistors in parallel and their impact on fast switching operations. EPE'20 ECCE Europe, Sep 2020, Lyon, France. pp.P.1-P.9, ⟨10.23919/EPE20ECCEEurope43536.2020.9215684⟩. ⟨hal-03184726⟩