Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

Mukherjee Chhandak (1, 2) , Marina Deng (3, 2) , Virginie Nodjiadjim (4, 5) , Muriel Riet (4, 5) , Colin Mismer (4, 5) , Djeber Guendouz (3, 2) , Christophe Caillaud (4, 5) , Hervé Bertin (4, 5) , Nicolas Vaissiere (4, 5) , Mathieu Luisier (6) , Xin Wen (6) , Magali de Matos (2, 2) , Patrick Mounaix (2, 2) , Cristell Maneux (2, 3)

1 CNRS - Centre National de la Recherche Scientifique
2 IMS - Laboratoire de l'intégration, du matériau au système
3 University of Bordeaux
4 III-V Lab - Alcatel-Thalès III-V lab
5 Nokia Bell Labs
6 ETH Zürich - Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich]

This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal generation for the beyond-5G networks relies on the technology power loss management, we propose a single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics for the design of optoelectronic integrated circuits (OEICs) monolithically integrated on a single Indium-Phosphide (InP) die. Through the implementation of accurate and SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible compact models of uni-traveling carrier photodiodes (UTC-PDs) and InP double heterojunction bipolar transistors (DHBTs), we demonstrated that the next generation of THz technologies for beyond-5G networks requires (i) a multi-physical understanding of their operation described through electrical, photonic and thermal equations, (ii) dedicated test structures for characterization in the frequency range higher than 110 GHz, (iii) a dedicated parameter extraction procedure, along with (iv) a circuit reliability assessment methodology. Developed on the research and development activities achieved in the past two decades, we detailed each part of the multiphysics design optimization approach while ensuring technology power loss management through a holistic procedure compatible with existing software tools and design flow for the timely and cost-effective achievement of THz OEICs.

Mots clés: Compact model; Heterojunction bipolar transistors; Uni-traveling carrier photodiodes; High frequency HF; Indium phosphide; Sub-millimeter wave; Terahertz communication; TCAD and Monte Carlo simulations; Electrical characterisation

Domaines: Electronique; Optique / photonique; Micro et nanotechnologies/Microélectronique; Modélisation et simulation

Mukherjee Chhandak, Marina Deng, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, et al.. Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems. Applied Sciences, 2021, ⟨10.3390/app11052393⟩. ⟨hal-03163305⟩