The effect of doping on the lattice parameter and properties of cubic boron nitride

V. Mukhanov (1) , A. Courac (2) , Vladimir Solozhenko (3)

1 LSPM - Laboratoire des Sciences des Procédés et des Matériaux
2 IMPMC - Institut de minéralogie, de physique des matériaux et de cosmochimie
3 LSPM - Laboratoire des Sciences des Procédés et des Matériaux

The effect of doping of cubic boron nitride with beryllium, silicon, sulfur and magnesium on the lattice parameters, electrical conductivity and ESR spectra has been studied. It is established that the degree of doping increases significantly in the case of crystallization of cubic boron nitride from BN solutions in supercritical ammonia at 3.9-4.2 GPa and 1100°C in comparison with the conventional synthesis from melts of the Mg–B–N system at 4.2 GPa and 1400°C. Doping with silicon and beryllium results in semiconductor properties of cubic boron nitride.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Matériaux

V. Mukhanov, A. Courac, Vladimir Solozhenko. The effect of doping on the lattice parameter and properties of cubic boron nitride. Journal of Superhard Materials, 2020, 42 (6), pp.377-387. ⟨10.3103/S1063457620060088⟩. ⟨hal-03147986⟩