Mono-Versus Poly-Crystalline SiC for Nuclear Applications - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2020

Mono-Versus Poly-Crystalline SiC for Nuclear Applications

Résumé

3C-SiC layers of different microstructures (monocrystalline (100) and (111) oriented and polycrystalline) were implanted with high energy (800 keV) 129 Xe ++ ions. Implantations were performed at room temperature (RT) and at 500 °C using two different fluences of Φ1 = 1x10 16 and Φ2 = 1x10 17 at/cm 2. Surface blistering was only observed for RT and Φ2 implantations into poly-SiC material while mono-SiC kept rather smooth surface. This was due to more homogeneous Xe bubbles distribution (200 nm deep) in the mono-SiC than in the poly-SiC. Xe retention was found to be almost complete for all samples. Some Xe enhanced diffusion was detected in the poly-SiC material which was attributed to grain boundaries. Some irradiation-induced oxidation effect was evidenced, O element being located at the depth where Xe bubbles are accumulating. This was more pronounced for poly than for mono-SiC. These results demonstrate that SiC microstructure affects many aspects of its behavior upon Xe irradiation.

Domaines

Matériaux
Fichier principal
Vignette du fichier
Huang et al ICSCRM2019 rev.pdf (2.48 Mo) Télécharger le fichier

Dates et versions

hal-02990900 , version 1 (24-11-2020)

Identifiants

Citer

Xian Huang, Taguhi Yeghoyan, Stéphane Gavarini, Véronique Soulière, Nathalie Millard-Pinard, et al.. Mono-Versus Poly-Crystalline SiC for Nuclear Applications. International Conference on Silicon Carbide and Related Materials, Sep 2019, Kyoto, Japan. pp.139-144, ⟨10.4028/www.scientific.net/MSF.1004.139⟩. ⟨hal-02990900⟩
65 Consultations
104 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More