Custom plating of nanoscale semiconductor/catalyst junctions for photoelectrochemical water splitting

Kiseok Oh (1) , Olivier de Sagazan (2) , Cyril Léon (3) , Sylvain Le Gall (3) , Gabriel Loget (1)

1 ISCR - Institut des Sciences Chimiques de Rennes
2 IETR - Institut d'Électronique et des Technologies du numéRique
3 GeePs - Laboratoire Génie électrique et électronique de Paris

Photoelectrochemical water splitting under harsh chemical conditions can be promoted by dispersed transition metal nanoparticles electrodeposited on n-Si surfaces, without the need for classical protection layers. Although this method is simple, it only allows for poor control of metal morphology and geometry on the photoanode surface. Herein, we introduce templated nanoscale electrodeposition on photoactive n-Si for the customization of nanoscale inhomogeneous Schottky junctions and demonstrate their use as stable photoanodes. The photoelectrochemical properties of the so-manufactured photoanodes exhibit a strong dependence on the photoanodes’ geometrical features, and the obtained experimental trends are rationalized using simulation.

Mots clés: silicon; oxygen evolution reaction; photoelectrochemistry; Schottky junction; Photoelectrochemistry; Oxygen evolution reaction; Silicon

Domaines: Autre

Kiseok Oh, Olivier de Sagazan, Cyril Léon, Sylvain Le Gall, Gabriel Loget. Custom plating of nanoscale semiconductor/catalyst junctions for photoelectrochemical water splitting. Nanoscale, 2021, 13 (3), pp.1997-2004. ⟨10.1039/D0NR08414J⟩. ⟨hal-03100848⟩