Unusually long carrier lifetime in a Mott insulator revealed by time-resolved Photoemission Electron Microscopy

Danylo Babich (1) , Keiki Fukumoto (2) , Benoit Corraze (1) , Julien Tranchant (1) , Maciej Lorenc , Hervé Cailleau , S-y Koshihara (3) , Laurent Cario (1) , Etienne Janod (1)

1 IMN - Institut des Matériaux Jean Rouxel
2 High energy accelerator research organization - KEK
3 TITECH - Tokyo Institute of Technology [Tokyo]

Mott insulators display puzzling insulator to metal transitions under electric field. We study here the Mott insulator GaV4S8 using time-resolved Photoemission Electron Microcopy and reveal unusually long carrier lifetimes, supporting the mechanism of electronic avalanche.

Mots clés: OCIS codes: 320; 7130; 240; 6675

Domaines: Electrons fortement corrélés [cond-mat.str-el]

Danylo Babich, Keiki Fukumoto, Benoit Corraze, Julien Tranchant, Maciej Lorenc, et al.. Unusually long carrier lifetime in a Mott insulator revealed by time-resolved Photoemission Electron Microscopy. Frontiers in Optics / Laser Science (2020), paper LTu8F.3, Sep 2020, Washington, United States. ⟨hal-03092636⟩