1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiency

Ahmed Ben Slimane (1) , Amadeo Michaud (1) , Olivia Mauguin (1) , Xavier Lafosse (2) , Adrien Bercegol (1) , Laurent Lombez (1) , Jean-Christophe Harmand (2) , Stéphane Collin (2, 1)

1 IPVF - Institut Photovoltaïque d’Ile-de-France (UMR)
2 C2N - Centre de Nanosciences et de Nanotechnologies

We report on AlGaAs-based heterojunction solar cells grown by solid source molecu- lar beam epitaxy (MBE). We investigate InGaP and AlGaAs material quality and we demonstrate significant efficiency improvements by combining the best of each alloy: a thick p-AlGaAs base with tunable bandgap, and a thin 50 nm n-InGaP emitter separated by a thin intrinsic AlGaAs layer. We report a certified solar cell conversion efficiency of 18.7% with a 2-μm-thick AlGaAs layer and a bandgap of 1.73 eV, suit- able for high efficiency Si-based tandem devices.

Mots clés: AlGaAs; heterostructure; III-V solar cells; InGaP; MBE; 1.7eV

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]

Ahmed Ben Slimane, Amadeo Michaud, Olivia Mauguin, Xavier Lafosse, Adrien Bercegol, et al.. 1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiency. Progress in Photovoltaics, 2020, 28 (5), pp.393-402. ⟨10.1002/pip.3249⟩. ⟨hal-03084744⟩