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Article Dans Une Revue Scientific Reports Année : 2020

A physical memristor based Muthuswamy–Chua–Ginoux system

Bharathwaj Muthuswamy
  • Fonction : Auteur
Riccardo Meucci
  • Fonction : Auteur
Stefano Euzzor
  • Fonction : Auteur
Angelo Di Garbo
Kaliyaperumal Ganesan
  • Fonction : Auteur

Résumé

In 1976, Leon Chua showed that a thermistor can be modeled as a memristive device. Starting from this statement we designed a circuit that has four circuit elements: a linear passive inductor, a linear passive capacitor, a nonlinear resistor and a thermistor, that is, a nonlinear "locally active" memristor. Thus, the purpose of this work was to use a physical memristor, the thermistor, in a Muthuswamy-Chua chaotic system (circuit) instead of memristor emulators. Such circuit has been modeled by a new three-dimensional autonomous dynamical system exhibiting very particular properties such as the transition from torus breakdown to chaos. Then, mathematical analysis and detailed numerical investigations have enabled to establish that such a transition corresponds to the so-called route to Shilnikov spiral chaos but gives rise to a "double spiral attractor". Michael Faraday (1791-1867) is generally well known for his contributions to the study of electromagnetism and electrochemistry. However, according to Orton 1 , while investigating the effect of temperature on the conductivity of "sulphuret of silver" (silver sulfide) in 1833 he discovered what is now considered as a thermistor 2. Thermistor, i.e., thermal resistor, is thus an electrical-resistance element made of a semiconducting material the resistance of which varies with temperature. Thermistor production was then difficult, and applications were limited. One century had to pass before thermistors became commonly used by commercial manufacturers. In the 1930s, Samuel Ruben (1900-1988) invented the first commercial thermistor that he called "electrical pyrometer resistance" (Patents N o 2,021,491). He explained that: This invention relates to an electrical pyrometer and specifically to one utilizing the resistance change of a metallic compound with heat to indicate temperature changes. The characteristic property of the material employed for the temperature indicating resistance element is one having a high negative resistance coefficient.
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Dates et versions

hal-03079889 , version 1 (17-12-2020)

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Jean-Marc Ginoux, Bharathwaj Muthuswamy, Riccardo Meucci, Stefano Euzzor, Angelo Di Garbo, et al.. A physical memristor based Muthuswamy–Chua–Ginoux system. Scientific Reports, 2020, 10 (1), ⟨10.1038/s41598-020-76108-z⟩. ⟨hal-03079889⟩
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