Short-term reliability of high performance Q-band AlN/GaN HEMTs

R. Kabouche (1) , K. Harrouche (1) , Etienne Okada (1, 2) , F Medjdoub (1, 3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 WIND - IEMN - WIde baNd gap materials and Devices - IEMN

We report on an on-wafer short-term 40 GHz RF reliability stress test comparison between a 3 nm versus 4 nm barrier thickness AlN/GaN HEMT technology showing state-ofthe-art power performances in the millimeter wave range. It is found that the barrier thickness in this highly strain heterostructure has a major impact on the device reliability. The superior robustness when using thinner barrier (closer to the critical thickness) is attributed to the reduced strain.

Mots clés: GaN; HEMTs; output power density (Pout); power added efficiency (PAE); Q-band; on-wafer short-term reliability

Domaines: Micro et nanotechnologies/Microélectronique

R. Kabouche, K. Harrouche, Etienne Okada, F Medjdoub. Short-term reliability of high performance Q-band AlN/GaN HEMTs. IEEE International Reliability Physics Symposium (IRPS 2020), Apr 2020, Dallas, TX, United States. pp.1-6, ⟨10.1109/IRPS45951.2020.9129322⟩. ⟨hal-03044147⟩