Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devices

M Gryglas , M Baj , Benoit Jouault , G Faini (1) , A Cavanna (1)

1 LPN - Laboratoire de photonique et de nanostructures

Our paper is a first step towards tunnelling spectroscopy of individual X-minimum-related shallow donors. We investigated I-V characteristics of submicrometer mesa structures made on GaAs/AlAs/GaAs wafers delta-doped with silicon in the middle of AlAs layer. At 4.2 K and magnetic field up to 6 T we resolved well-separated peaks attributed to resonant tunnelling via individual donors. (C) 2002 Elsevier Science B.V. All rights reserved.

Mots clés: resonant tunnelling; X-minimum-related donor; single impurity

Domaines: Matière Condensée [cond-mat]

M Gryglas, M Baj, Benoit Jouault, G Faini, A Cavanna. Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devices. Physica E: Low-dimensional Systems and Nanostructures, 2003, 17 (1-4), pp.303-304. ⟨10.1016/S1386-9477(02)00816-0⟩. ⟨hal-03037545⟩