Transport Properties of Disordered Graphene Layers

M. Gryglas-Borysiewicz , Benoit Jouault (1) , J. Tworzydlo , S. Lewinska , W. Strupinski (2) , J. M. Baranowski (3, 2)

1 GES - Groupe d'étude des semiconducteurs
2 IEMT - Institute of Electronic Materials Technology
3 IFD - Institute of Experimental Physics [Warsaw]

Samples consisting of a few layers of graphene obtained by thermal decomposition of SiC were studied by means of transport experiments at 4 K and in a magnetic field up to 7 T. Transport data show that the samples have a two-dimensional character. Magnetoresistance has an approximately linear character at high magnetic fields, which has been previously observed in graphite samples, and a negative magnetoresistance, at low magnetic fields. The transverse resistivity rho(xy) is nonlinear as a function of B, which can be described using a many-carrier model

Domaines: Matière Condensée [cond-mat]

M. Gryglas-Borysiewicz, Benoit Jouault, J. Tworzydlo, S. Lewinska, W. Strupinski, et al.. Transport Properties of Disordered Graphene Layers. Acta Physica Polonica A, 2009, 116 (5), pp.838-840. ⟨10.12693/APhysPolA.116.838⟩. ⟨hal-03037528⟩