Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

Benoit Jouault (1) , N. Camara (2) , B. Jabakhanji (3) , A. Caboni (4) , C. Consejo (1) , P. Godignon (4) , Duncan Kennedy Maude (5) , J. Camassel (6)

1 L2C - Laboratoire Charles Coulomb
2 CHU de Poitiers [La Milétrie] - Centre hospitalier universitaire de Poitiers = Poitiers University Hospital
3 American University of The Middle East [Eqaila]
4 CNM - National Centre for Microelectronic
5 LNCMI-G - Laboratoire national des champs magnétiques intenses - Grenoble
6 GES - Groupe d'étude des semiconducteurs

We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal. The charge neutrality point is observed close to gate voltage zero, and graphene can be populated by either holes or electrons down to low temperature (1.5 K). The hole concentration is hardly tuned by the gate voltage, possibly because of interface states below the Dirac point. A remarkably large quantum Hall plateau is observed for electrons. (C) 2012 American Institute of Physics. [doi:10.1063/1.3680564]

Domaines: Matière Condensée [cond-mat]

Benoit Jouault, N. Camara, B. Jabakhanji, A. Caboni, C. Consejo, et al.. Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC. Applied Physics Letters, 2012, 100 (5), pp.052102. ⟨10.1063/1.3680564⟩. ⟨hal-03037520⟩