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Communication Dans Un Congrès Année : 2016

Convenient Graphene-Based Quantum Hall Resistance Standards

Résumé

We report on measurements in large quantum Hall devices, made of high-quality graphene grown by propane/hydrogen chemical vapor deposition on SiC. These devices, having all the properties of an ideal quantum electrical resistance standard, surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their operational conditions. The Hall resistance can be found accurately quantized within one part in 10(9) over a 10-T range of magnetic fields with a lower bound at 3.5 T, temperatures as high as 10 K, or currents as high as 0.5 mA. This simplification sets the superiority of graphene for accessible and low-cost primary resistance standards.
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Dates et versions

hal-03037516 , version 1 (03-12-2020)

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  • HAL Id : hal-03037516 , version 1

Citer

J. Brun-Picard, R. Ribeiro-Palau, F. Lafont, D. Kazazis, A. Michon, et al.. Convenient Graphene-Based Quantum Hall Resistance Standards. 2016 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2016), 2016, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region. ⟨hal-03037516⟩
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