Dark Count Rate Modeling in Single-Photon Avalanche Diodes

Aymeric Panglosse (1) , Philippe Martin-Gonthier (1) , Olivier Marcelot (1) , Cédric Virmontois (2) , Olivier Saint-Pé (3) , Pierre Magnan (1)

1 DEOS - Département Electronique, Optronique et Signal
2 CNES - Centre National d'Études Spatiales [Toulouse]
3 Airbus Operation S.A.S.

In this paper, we present a model to simulate accurately the Dark Count Rate (DCR) for Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology. The model development has been driven by the necessity to comply with the specifications of SPAD used for future space LIDAR applications. To evaluate the DCR, the model is based on a combination of measurements to acquire data related to trap population, Technology Computer-Aided Design (TCAD) simulations and a Matlab routine.

Mots clés: Single photon avalanche diode (SPAD); Complementary metal-oxide semiconductor (CMOS); Modelling and simulations; Dark count rate (DCR); Technology CAD (TCAD); Matlab

Domaines: Traitement du signal et de l'image [eess.SP]

Aymeric Panglosse, Philippe Martin-Gonthier, Olivier Marcelot, Cédric Virmontois, Olivier Saint-Pé, et al.. Dark Count Rate Modeling in Single-Photon Avalanche Diodes. IEEE Transactions on Circuits and Systems I: Regular Papers, 2020, 67 (5), pp.1507-1515. ⟨10.1109/TCSI.2020.2971108⟩. ⟨hal-03035812⟩