High PAE high reliability AlN/GaN double heterostructure

F Medjdoub (1) , Malek Zegaoui (1) , Astrid Linge (1) , B. Grimbert (1) , Riccardo Silvestri (2) , Matteo Meneghini (2) , Gaudenzio Meneghesso (2) , Enrico Zanoni (2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 Unipd - Università degli Studi di Padova = University of Padua

We report on AlN/GaN double heterostructures for high frequency applications. 600 h preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-on-Si device stability for the first time. A 150 nm AlN/GaN double heterostructure has been developed and evaluated on SiC substrate. State-of-the-art CW power-added-efficiencies (PAE) up to 40 GHz have been achieved on ultrathin barrier (6 nm) GaN devices while operating at a drain bias exceeding 30 V.

Mots clés: AlN/GaN DHFET; Load-pull; Power-added-efficiency (PAE); Reliability; RF power

Domaines: Sciences de l'ingénieur [physics]

F Medjdoub, Malek Zegaoui, Astrid Linge, B. Grimbert, Riccardo Silvestri, et al.. High PAE high reliability AlN/GaN double heterostructure. Solid-State Electronics, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩. ⟨hal-03028370⟩