High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

F Medjdoub (1) , Riad Kabouche , Astrid Linge , Bertrand Grimbert , Malek Zegaoui , Piero Gamarra , Cédric Lacam , Maurice Tordjman , Marie-Antoinette Di Forte-Poisson

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Domaines: Sciences de l'ingénieur [physics]

F Medjdoub, Riad Kabouche, Astrid Linge, Bertrand Grimbert, Malek Zegaoui, et al.. High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure. Applied Physics Express, 2015, 8 (10), pp.101001. ⟨10.7567/APEX.8.101001⟩. ⟨hal-03028367⟩