InAlGaN/GaN HEMTs at Cryogenic Temperatures

Ezgi Dogmus (1) , Riad Kabouche (1) , Sylvie Lepilliet (1) , Astrid Linge (1) , Malek Zegaoui (1) , Hichem Ben-Ammar (2) , Marie-Pierre Chauvat (2) , Pierre Ruterana (2) , Piero Gamarra (3) , Cédric Lacam (3) , Maurice Tordjman (3) , F Medjdoub (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
3 Thales Research and Technology [Palaiseau]

We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm2·V−1·s−1 combined with a sheet carrier density of 1.93 × 1013 cm−2 leading to a remarkably low sheet resistance of 44 Ω/□ are measured at 4 K. A strong improvement of Direct current (DC) and Radio frequency (RF) characteristics is observed at low temperatures. The excellent current and power gain cutoff frequencies (fT/fmax) of 65/180 GHz and 95/265 GHz at room temperature and 77 K, respectively, using a 0.12 μm technology confirmed the outstanding 2DEG properties.

Mots clés: InAlGaN HEMT; Cryogenic temperature; Microwave

Domaines: Sciences de l'ingénieur [physics]

Ezgi Dogmus, Riad Kabouche, Sylvie Lepilliet, Astrid Linge, Malek Zegaoui, et al.. InAlGaN/GaN HEMTs at Cryogenic Temperatures. Electronics, 2016, 5 (2), pp.31. ⟨10.3390/electronics5020031⟩. ⟨hal-03028345⟩