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Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecularbeam epitaxy

Abstract : We analyse the electrical and optical propreties of single GaN nanowire p-n junctions grown by plasma-assisted molecular-beam epitaxy using magnesium and silicon as doping sources. Different junction architectures having either a n-base or a p-base structure are compared using optical and electrical analyses. Electron-beam induced current microscopy of the nanowires shows that in the case of a n-base p-n junction the parasitic radial growth enhanced by the Mg doping leads to a mixed axial-radial behavior with strong wire-to-wire fluctuations of the junction position and shape. By reverting the doping order p-base p-n junctions with a purely axial well-defined structure and a low wire-to-wire dispersion are achieved. The good optical quality of the top n nanowire segment grown on a p-doped stem is preserved. A hole concentration in the p-doped segment exceeding 10 18 cm-3 was extracted from electron beam induced current mapping and photoluminescence analyses. This high concentration is reached without degrading the nanowire morphology.
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https://hal.archives-ouvertes.fr/hal-03019946
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Submitted on : Monday, November 23, 2020 - 4:01:59 PM
Last modification on : Monday, November 29, 2021 - 8:26:05 AM
Long-term archiving on: : Thursday, February 25, 2021 - 1:35:19 PM

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Omar Saket, Junkang Wang, Nuno Amador-Mendez, Martina Morassi, Arup Kunti, et al.. Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecularbeam epitaxy. Nanotechnology, Institute of Physics, 2020, ⟨10.1088/1361-6528/abc91a⟩. ⟨hal-03019946⟩

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