Electrical modeling of tapered TSV including MOS-Field effect and substrate parasitics: Analysis and application

Amira Nabil (1, 2) , Jose Bernardo (3) , Yue Ma (4) , Mohamed Abouelatta (1) , Ahmed Shaker (1) , Latifa Fakri-Bouchet (3) , Hani Ragai (1) , Christian Gontrand (4)

1 ASU - Ain Shams University
2 New Cairo Academy, Higher Institute for Engineering and Technology
3 ISA-Interfaces & biosensors - Interfaces & biocapteurs
4 INL - Institut des Nanotechnologies de Lyon

Domaines: Chimie analytique

Amira Nabil, Jose Bernardo, Yue Ma, Mohamed Abouelatta, Ahmed Shaker, et al.. Electrical modeling of tapered TSV including MOS-Field effect and substrate parasitics: Analysis and application. Microelectronics Journal, 2020, 100, pp.104797. ⟨10.1016/j.mejo.2020.104797⟩. ⟨hal-03002039⟩