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Interfacial influence on electrical injection and transport characterization of CoFeB|MgO|GaAs-InGaAs quantum wells hetero-structure

Abstract : The quality of interfaces is a key factor for efficient electrical spin injection into quantum well light emitting diodes. Here, we investigate the interfacial influence on the electrical transport properties in CoFeB|MgO|GaAs-InGaAs quantum wells hetero-structure, by considering textured MgO tunnel barrier fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). From forward and reverse current-voltage characteristics , it is found that the threshold voltage decreases as the annealing temperature changes from room temperature to 300°C for sputtered samples, however there is not much difference in threshold voltage with the annealing temperature for MBE-grown samples. In combination with transmission electron microscope (TEM) studies, it is found the MgO|GaAs interface by MBE is sharp for both grown and annealed states. However, there is a thin (∼0.4 nm) amorphous MgO layer at the MgO|GaAs interface for sputtered samples with grown state, and the amorphous MgO can be improved and crystallized after annealing. The MgO|GaAs interface plays a role in modulating the band structure and has an influence on electrical injection. Our work demonstrated that CoFeB|MgO|GaAs interfaces are important and can be engineered thanks to the use of two types of growth for the textured MgO tunnel barriers, which ensures efficient electrical injection.
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Submitted on : Friday, November 20, 2020 - 11:33:30 PM
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Y. Tian, C. Zhang, C. Xiao, R. Wang, L. Xu, et al.. Interfacial influence on electrical injection and transport characterization of CoFeB|MgO|GaAs-InGaAs quantum wells hetero-structure. Applied Surface Science, Elsevier, 2019, 473, pp.230-234. ⟨10.1016/j.apsusc.2018.12.039⟩. ⟨hal-02999638⟩

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