Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region

Philippe Boucaud (1) , A Elbaz , R Arefin , E Sakat , B Wang , E Herth , G Patriarche , A Foti , ¶ R Ossikovski , ¶ S Sauvage , X Checoury , K Pantzas , I Sagnes , J Chretien , L Casiez , M. Bertrand (2) , V Calvo , N Pauc , A Chelnokov , ⊥ F Boeuf , V Reboud , J.-M Hartmann , M El Kurdi

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on ger-manium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack 1

Domaines: Sciences de l'ingénieur [physics]; Optique / photonique; Matériaux

Philippe Boucaud, A Elbaz, R Arefin, E Sakat, B Wang, et al.. Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region. ACS Photonics, 2020, 7, pp.2713. ⟨10.1021/acsphotonics.0c00708⟩. ⟨hal-02986491⟩