In‐Depth Atomic Mapping of Polarization Switching in a Ferroelectric Field‐Effect Transistor

Xiaoyan Li (1) , Qiuxiang Zhu (2) , Lorenzo Vistoli (2) , Agnès Barthélémy (2) , M Bibes (2) , Stéphane Fusil (2) , Vincent Garcia (2) , Alexandre Gloter (1)

1 LPS - Laboratoire de Physique des Solides
2 Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)

Mots clés: Mott transistor; ferroelectric field effect; ferroelectric domains; electronic charge modulation; scanning transmission electron microscopy; electron-energy loss spectroscopy

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Xiaoyan Li, Qiuxiang Zhu, Lorenzo Vistoli, Agnès Barthélémy, M Bibes, et al.. In‐Depth Atomic Mapping of Polarization Switching in a Ferroelectric Field‐Effect Transistor. Advanced Materials Interfaces, 2020, 7 (14), pp.2000601. ⟨10.1002/admi.202000601⟩. ⟨hal-02984525⟩