Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

F. Nallet (1) , A. Senes (2) , Dominique Planson (1) , Marie-Laure Locatelli (1) , J.P. Chante (1) , D. Renault (1)

1 CEGELY - Centre de génie électrique de Lyon
2 SE - Schneider Electric

This work presents a novel field for solid state power devices : a 4H-SiC specific device is examined as a current limiting device for serial protection application. The device structure is a vertical power MOSFET like with a existing N channel. Its performances is simulated with ISE TCAD tools. A study of its electrothermal behavior is presented, demonstrating the SiC superiority over silicon with regards to this field.

Mots clés: SiC; current limiting device; serial protection; temperature; simulation

Domaines: Energie électrique

F. Nallet, A. Senes, Dominique Planson, Marie-Laure Locatelli, J.P. Chante, et al.. Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications. 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings, May 2000, Toulouse, France. pp.287-290, ⟨10.1109/ISPSD.2000.856827⟩. ⟨hal-02972084⟩