Heteroepitaxial growth of sp 2 -hybridized boron nitride multilayer on nickel substrates by CVD: the key role of the substrate orientation

Henri Prevost (1) , Amandine Andrieux-Ledier (2) , Nelly Dorval (2) , Frédéric Fossard (1) , Jean Sébastien Mérot (1) , Léonard Schué (1, 3) , Alexandre Plaud (1, 3) , Eva Héripré (4) , Julien Barjon (3) , Annick Loiseau (1)

1 Laboratoire d'étude des microstructures - LEM, UMR 104, CNRS-ONERA, Université Paris-Saclay
2 DPHY, ONERA, Université Paris Saclay [Châtillon]
3 GEMAC - Groupe d'Etude de la Matière Condensée
4 MSSMat - Laboratoire de mécanique des sols, structures et matériaux

sp 2-hybridized boron nitride is identified as a strategic material for many purposes related to the integration of graphene and 2D materials in devices and the fabrication of van der Waals heterostructures. Thus, it becomes mandatory to have scalable synthesis and characterization procedures for providing suitable and reliable boron nitride material according to these identified needs. We report here on the growth of sp 2-hybridized boron nitride film on polycrystalline nickel substrate by chemical vapor deposition with borazine as precursor. We propose a complete study of the influence of the underlying nickel grain orientation on the BN structure layers, in terms of thickness, crystallographic orientation, domain size and stacking. We show the heteroepitaxial growth of continuous, single crystalline hexagonal boron nitride multilayer film on nickel (111)-like grains. We highlight its ABC stacking sequence with AB stacking faults and show how it impacts the Raman and cathodoluminescence spectra.

Domaines: Sciences de l'ingénieur [physics]; Physique [physics]

Henri Prevost, Amandine Andrieux-Ledier, Nelly Dorval, Frédéric Fossard, Jean Sébastien Mérot, et al.. Heteroepitaxial growth of sp 2 -hybridized boron nitride multilayer on nickel substrates by CVD: the key role of the substrate orientation. 2D Materials, 2020, 7 (4, 045018), pp.1-10. ⟨10.1088/2053-1583/aba8ad⟩. ⟨hal-02969129⟩