Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah (1, 2) , Damien Risaletto (1, 2) , Christophe Raynaud (2) , Kamel Besbes (3) , Dominique Bergogne (1, 2) , Dominique Planson (1, 2) , Hervé Morel (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 UM - Université de Monastir - University of Monastir

A novel experimental set-up is developed and validated to characterize high voltage diodes in transient switching mode. Parameters extracted from DMTVCA and OCVD techniques, like ambipolar lifetime, epilayer thickness and doping level, diode area, are validated in a buck converter with resistive load. The experimental set-up allows to measure the current and voltage transient characteristics without noise and influence of high parasitic wiring. Experimental results are compared with device simulations and a good correlation is found.

Mots clés: SiC devices; bipolar diode; High Voltage

Domaines: Sciences de l'ingénieur [physics]; Energie électrique

Tarek Ben Salah, Damien Risaletto, Christophe Raynaud, Kamel Besbes, Dominique Bergogne, et al.. Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies. ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩. ⟨hal-02958620⟩