New Applications in Power Electronics Based on SiC Power Devices

Hervé Morel (1, 2) , Dominique Bergogne (1, 2) , Dominique Planson (1, 2) , Bruno Allard (1, 2) , Régis Meuret (3)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 HISPANO SUIZA

Controlled switch devices are now available in silicon carbide. So new applications are possible. The SiC-JFET enables to develop high temperature inverters for the More Electric Aircraft for instance. The diode-less SiC-JFET inverter is a potentially nice solution, but specific drivers, passive components and packaging have to be developed. Besides high voltage applications need high voltage devices. In this case design rules have to be adapted to the extended short-circuit and breakdown voltage capabilities of SiC devices.

Mots clés: SiC devices; JFET; Power Electronics; High Temperature; High Voltage

Domaines: Sciences de l'ingénieur [physics]; Energie électrique

Hervé Morel, Dominique Bergogne, Dominique Planson, Bruno Allard, Régis Meuret. New Applications in Power Electronics Based on SiC Power Devices. ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩. ⟨hal-02958610⟩