Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation

A Uvarov (1) , A Gudovskikh (1) , V Nevedomskiy (2) , Artem Baranov (1) , D Kudryashov (1) , I Morozov (1) , Jean-Paul Kleider (3)

1 National Research Academic University, Russian Academy of Science, Khlopina 8- 3,194021, St.-Petersburg, Russia,
2 A.F. Ioffe Physical-Technical Institute
3 GeePs - Laboratoire Génie électrique et électronique de Paris

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique; Energie électrique; Optique / photonique; Matériaux

A Uvarov, A Gudovskikh, V Nevedomskiy, Artem Baranov, D Kudryashov, et al.. Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation. Journal of Physics D: Applied Physics, 2020, 53 (34), pp.345105. ⟨10.1088/1361-6463/ab8bfd⟩. ⟨hal-02946512⟩