Analysis of Parasitic Elements in Power Modules Based on GaN Components

Joao Oliveira (1) , Hervé Morel (2, 3) , Dominique Planson (2, 3) , Florent Loiselay (1)

1 Institut VEDECOM
2 EE - Ampère, Département Energie Electrique
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon

This paper aims to evaluate a GaN based power module for automotive applications. Simulations and experiments were then performed on a classical double pulse test bench. In regard to EMC, the oscillations on the Vds after device turn-off is quite important. The comparison between a simulation without considering the 3D wiring model and a simulation by considering the wiring elements is presented. The impact of the parasitic elements modelling is seen through the resonance frequencies found. Experimental results of operation of the converter are presented to validate the simulation approach.

Domaines: Energie électrique

Joao Oliveira, Hervé Morel, Dominique Planson, Florent Loiselay. Analysis of Parasitic Elements in Power Modules Based on GaN Components. PCIM Europe 2020, Jul 2020, Nuremberg, Germany. ⟨hal-02945892⟩