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Article Dans Une Revue Sensors Année : 2020

Magnetic Tunnel Junction Applications

Résumé

Spin-based devices can reduce energy leakage and thus increase energy efficiency. They have been seen as an approach to overcoming the constraints of CMOS downscaling, specifically, the Magnetic Tunnel Junction (MTJ) which has been the focus of much research in recent years. Its nonvolatility, scalability and low power consumption are highly attractive when applied in several components. This paper aims at providing a survey of a selection of MTJ applications such as memory and analog to digital converter, among others.
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Origine : Publication financée par une institution

Dates et versions

hal-02941339 , version 1 (26-01-2024)

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Nilson Maciel, Elaine Marques, Lirida Naviner, Yongliang Zhou, Hao Cai. Magnetic Tunnel Junction Applications. Sensors, 2020, 20 (1), pp.121. ⟨10.3390/s20010121⟩. ⟨hal-02941339⟩
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