Highly Sensitive Capacitive Sensor Based on Injection Locked Oscillators with ppm Sensing Resolution - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2020

Highly Sensitive Capacitive Sensor Based on Injection Locked Oscillators with ppm Sensing Resolution

Résumé

This paper presents the design and the implementation of an ultra-sensitive capacitive sensor based on an injection-locked oscillator architecture able to achieve ppm sensing resolution. The proposed RF IC chip, implemented on a BiCMOS SiGe 0.25 μm technology, is able to detect capacitance changes in the range of few attoF, induced by dielectric disturbance occurring on on-chip integrated sensing capacitors. Indeed, this paper demonstrates that, once locked on a 4.693 GHz and-50 dBm injection signal, the proposed sensing system can efficiently detect differences of free running frequencies as low as 10 kHz between two oscillators. Considering a differential measurement approach with two injection locked oscillators (one used as a sensor, the other as a reference), a 3 attoF difference between both LC tank sensing capacitors might be detectable. This results, in the present case, in a 5 ppm sensing sensitivity.
Fichier principal
Vignette du fichier
Zenodo Highly Sensitive Capacitive Sensor Based on Injection Locked Oscillators with ppm Sensing Resolution.pdf (988.54 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-02939709 , version 1 (18-12-2020)

Identifiants

  • HAL Id : hal-02939709 , version 1

Citer

Meissa Babay, Clement Hallepee, Claire Dalmay, Bruno Barelaud, Emre Can Durmaz, et al.. Highly Sensitive Capacitive Sensor Based on Injection Locked Oscillators with ppm Sensing Resolution. IMS 2020 IEEE MTT-S International Microwave Symposium, Aug 2020, Los Angeles, United States. ⟨hal-02939709⟩
49 Consultations
111 Téléchargements

Partager

Gmail Facebook X LinkedIn More