‘Effects of high temperature on the electrical behaviour of AlGaN/GaN HEMTs’

Y. Guhel (1) , B. Boudart , Virginie Hoel , M. Werquin , Christophe Gaquière , Jean-Claude de Jaeger , M. A. Poisson , I. Daumiller , E. Kohn

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

High-temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high-temperature electrical measurements have also shown the existence of electrical traps. These traps are sensitive to the bias point, the illumination, and the temperature

Domaines: Sciences de l'ingénieur [physics]

Y. Guhel, B. Boudart, Virginie Hoel, M. Werquin, Christophe Gaquière, et al.. ‘Effects of high temperature on the electrical behaviour of AlGaN/GaN HEMTs’. Microwave and Optical Technology Letters, 2002, 34, pp.4-6. ⟨10.1002/mop.10355⟩. ⟨hal-02936050⟩