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Strain induced Pockels effect in silicon for electro-optic modulation

Abstract : The strong evolution of silicon photonics towards very low power consumption circuits leads to the development of new strategies for photonic devices, especially for power-hungry components such as optical modulators. One strategy is to use Pockels effect in Si waveguides. However, bulk Si is a centrosymmetric semiconductor, which cannot exhibit any second order optical nonlinearities. Nonetheless, under a strain gradient, generated by depositing a stressed layer on Si waveguides, this restriction vanishes. In our work, we experimentally demonstrated a Pockels effect based electro-optic modulation at high frequency (> 5GHz) using a strained silicon Mach-Zehnder modulator.
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https://hal.archives-ouvertes.fr/hal-02933344
Contributor : Christian Lafforgue <>
Submitted on : Tuesday, September 8, 2020 - 1:26:09 PM
Last modification on : Friday, July 2, 2021 - 3:45:59 AM
Long-term archiving on: : Wednesday, December 2, 2020 - 10:46:11 PM

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Christian Lafforgue, Mathias Berciano, Lucas Deniel, Guillaume Marcaud, Xavier Le Roux, et al.. Strain induced Pockels effect in silicon for electro-optic modulation. Photonics West, Feb 2020, San Francisco, United States. ⟨10.1117/12.2545682⟩. ⟨hal-02933344⟩

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