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Two-octaves spanning supercontinuum generation in nitrogen-rich silicon nitride

Abstract : Here we experimentally demonstrate two-octave spanning supercontinuum generation in nitrogen-rich silicon nitride waveguides fabricated through backend CMOS compatible processes. Experimental results are in good agreement with our numerical calculations.
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Conference papers
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https://hal.archives-ouvertes.fr/hal-02933340
Contributor : Christian Lafforgue <>
Submitted on : Tuesday, September 15, 2020 - 11:42:20 AM
Last modification on : Friday, July 2, 2021 - 3:46:01 AM

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  • HAL Id : hal-02933340, version 1

Citation

Christian Lafforgue, Sylvain Guerber, Joan Ramírez, Xavier Le Roux, Guillaume Marcaud, et al.. Two-octaves spanning supercontinuum generation in nitrogen-rich silicon nitride. Photonics North, May 2019, Quebec city, Canada. ⟨hal-02933340⟩

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