Two-octaves spanning supercontinuum generation in nitrogen-rich silicon nitride
Résumé
Here we experimentally demonstrate two-octave spanning supercontinuum generation in nitrogen-rich silicon nitride waveguides fabricated through backend CMOS compatible processes. Experimental results are in good agreement with our numerical calculations.
Domaines
Optique / photonique
Origine : Fichiers produits par l'(les) auteur(s)