Skip to Main content Skip to Navigation
Conference papers

Strain-induced electro-optical effect in silicon Mach-Zehnder modulators

Abstract : Due to the strong evolution of data transmission worldwide, silicon photonics needs to provide low power consuming and ultra-fast modulators. Pockels effect is known to answer both these demands. However, silicon is a centrosymmetric crystal, which makes it inadequate to use Pockels effect. Nonetheless, by straining a silicon waveguide, it is possible to unlock second order nonlinear optics effects, enabling electro-optic modulation through Pockels effect. In our work, we experimentally demonstrated a high-speed strain-induced Pockels effect based electro-optic modulation in a Mach-Zehnder silicon modulator. We also present a complete analysis of Pockels, Kerr, and free carriers effects.
Document type :
Conference papers
Complete list of metadata

Cited literature [7 references]  Display  Hide  Download
Contributor : Christian Lafforgue Connect in order to contact the contributor
Submitted on : Tuesday, September 8, 2020 - 12:14:35 PM
Last modification on : Sunday, June 26, 2022 - 2:53:28 AM
Long-term archiving on: : Friday, December 4, 2020 - 5:20:25 PM


Files produced by the author(s)


  • HAL Id : hal-02933286, version 1


Christian Lafforgue, Mathias Berciano, Lucas Deniel, Guillaume Marcaud, Xavier Le Roux, et al.. Strain-induced electro-optical effect in silicon Mach-Zehnder modulators. ECIO, Jun 2020, Palaiseau, France. ⟨hal-02933286⟩



Record views


Files downloads