2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Mohamed-Reda Irekti (1, 2) , Marie Lesecq (1, 2) , N. Defrance (1, 2) , Etienne Okada (1, 3) , Eric Frayssinet (4) , Yvon Cordier (4) , Jean-Guy Tartarin (5) , Jean-Claude de Jaeger (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PUISSANCE - IEMN - Puissance - IEMN
3 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
4 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
5 UT3 - Université Toulouse III - Paul Sabatier

In this letter, a record performance at 40 GHz obtained on AlGaN/GaN high electron mobility transistor (HEMT) grown on Hydride Vapor Phase Epitaxy (HVPE) Free-Standing GaN substrate is reported. An output power density of 2 W.mm-1 associated with 20.5 % power added efficiency and a linear power gain (Gp) of 4.2 dB is demonstrated for 70 nm gate length device. The device exhibits a maximum DC drain current density of 950 mA.mm-1 and a peak extrinsic transconductance (gm Max) of 300 mS.mm-1 at VDS = 6 V. A 100 GHz maximum intrinsic cutoff frequency fT, and a maximum intrinsic oscillation frequency f Max of 125 GHz are obtained from Sparameters measurement. This performance is very promising for HEMTs grown on Free-Standing GaN substrate.

Mots clés: free-standing GaN; hydride vapor phase epitaxy (HVPE); AlGaN/GaN; high electron mobility transistor (HEMT); millimeter-wave power density

Domaines: Micro et nanotechnologies/Microélectronique

Mohamed-Reda Irekti, Marie Lesecq, N. Defrance, Etienne Okada, Eric Frayssinet, et al.. 2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. Semiconductor Science and Technology, 2019, 34 (12), pp.12LT01. ⟨10.1088/1361-6641/ab4e74⟩. ⟨hal-02929065⟩