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Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe 2

Abstract : Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce mag-netism in the material. We report on the atomic structure and electronic properties of monolayerWSe2intentionally doped with vanadium atoms by means of scanning transmission electron mi-croscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate atW sites. These VWdopants are negatively charged, which induces a localized bound state located140 meV above the valence band maximum. The overlap of the electronic potential of two chargedVWdopants generates additional in-gap states. Eventually, the negative charge may suppress themagnetic moment on the VW dopants
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https://hal.archives-ouvertes.fr/hal-02928456
Contributor : Jean-Yves Veuillen <>
Submitted on : Tuesday, October 6, 2020 - 9:58:16 AM
Last modification on : Monday, December 14, 2020 - 5:52:14 PM
Long-term archiving on: : Thursday, January 7, 2021 - 6:15:16 PM

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Pierre Mallet, Florian Chiapello, Hanako Okuno, Hervé Boukari, Matthieu Jamet, et al.. Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe 2. Physical Review Letters, American Physical Society, 2020, 125 (3), pp.036802. ⟨10.1103/PhysRevLett.125.036802⟩. ⟨hal-02928456⟩

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